Stoichiometric and Structural Origin of Electronic States at thePd2Si-Si Interface
| العنوان: | Stoichiometric and Structural Origin of Electronic States at thePd2Si-Si Interface |
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| المؤلفون: | H. Foll, Paul S. Ho, P. E. Schmid |
| المصدر: | Physical Review Letters. 46:1495-1495 |
| بيانات النشر: | American Physical Society (APS), 1981. |
| سنة النشر: | 1981 |
| مصطلحات موضوعية: | Materials science, Chemical physics, Interface (Java), General Physics and Astronomy, Atomic physics, Stoichiometry, Electronic states |
| تدمد: | 0031-9007 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c9042400ee90a49ed83e25c233c549b https://doi.org/10.1103/physrevlett.46.1495 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....5c9042400ee90a49ed83e25c233c549b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 00319007 |
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