Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
| العنوان: | Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition |
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| المؤلفون: | Isabel Streicher, Stefano Leone, Christian Manz, Lutz Kirste, Mario Prescher, Patrick Waltereit, Michael Mikulla, Rüdiger Quay, Oliver Ambacher |
| المساهمون: | Publica |
| المصدر: | Crystal Growth & Design. 23:782-791 |
| بيانات النشر: | American Chemical Society (ACS), 2023. |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | General Materials Science, General Chemistry, Condensed Matter Physics |
| الوصف: | AlScN/GaN heterostructures with their high sheet carrier density (ns) in the two-dimensional electron gas (2DEG) have a high potential for high-frequency and high-power electronics. The abruptness of the heterointerface plays a key role in the 2DEG confinement, and the presence of interlayers (AlN, AlGaN) affects ns and electron mobility (μ) and determines the sheet resistance (Rsh). AlScN/GaN heterostructures suitable for high-electron mobility transistors (HEMT) with and without a nominal AlN interlayer were grown by metal-organic chemical vapor deposition (MOCVD) and characterized electrically and structurally to gain a systematic insight into the unintentional formation and control of graded AlGaN interlayers by diffusion of atoms at the heterointerface. The AlN interlayer increases ns from 2.52 × 1013 cm-2 to 3.25 × 1013 cm-2 and, as calculated by one-dimensional Schrödinger-Poisson simulations, improves the 2DEG confinement. The barrier growth temperature was varied from 900 °C to 1200 °C to investigate the effect of the thermal budget on diffusion. Growth at 900 °C reduces the thickness of the graded AlGaN interlayer and improves the 2DEG confinement, leading to Rsh of 211 Ω/sq, ns of 2.98 × 1013 cm-2, and μ of 998 cm2/(Vs). |
| تدمد: | 1528-7505 1528-7483 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d1b9bf892084d173a157b1d4747acc2 https://doi.org/10.1021/acs.cgd.2c01013 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....5d1b9bf892084d173a157b1d4747acc2 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 15287505 15287483 |
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