Hall field-induced resistance oscillations in a tunable-density GaAs quantum well

التفاصيل البيبلوغرافية
العنوان: Hall field-induced resistance oscillations in a tunable-density GaAs quantum well
المؤلفون: B. Friess, Michael Zudov, Jurgen H. Smet, Qianhui Shi, Vladimir Umansky, K. von Klitzing, Ivan Dmitriev
بيانات النشر: AMER PHYSICAL SOC, 2017.
سنة النشر: 2017
مصطلحات موضوعية: Field (physics), Population, Cyclotron, FOS: Physical sciences, 02 engineering and technology, Electron, 2-DIMENSIONAL ELECTRON-GAS, SYSTEM, HETEROSTRUCTURES, PHYSICS, MBE, 01 natural sciences, law.invention, law, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, 010306 general physics, education, Quantum, Quantum well, Physics, education.field_of_study, Record value, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed matter physics, ddc:530, 021001 nanoscience & nanotechnology, 530 Physik, Product (mathematics), 0210 nano-technology
الوصف: We report on Hall field-induced resistance oscillations (HIRO) in a 60 nm-wide GaAs/AlGaAs quantum well with an \emph{in situ} grown back gate, which allows tuning the carrier density $n$. At low $n$, when all electrons are confined to the lowest subband (SB1), the HIRO frequency, proportional to the product of the cyclotron diameter and the Hall field, scales with $n^{-1/2}$, as expected. Remarkably, population of the second subband (SB2) significantly enhances HIRO, while their frequency now scales as $n^{-1}$. We demonstrate that in this two-subband regime HIRO still originate solely from backscattering of SB1 electrons. The unusual density dependence occurs because the population of SB2 steadily increases, while that of SB1 remains essentially unchanged. The enhancement of HIRO manifests an unexpected, step-like increase of the quantum lifetime of SB1 electrons, which reaches a record value of 52 ps in the two-subband regime.
Comment: 5 pages, 5 figures
وصف الملف: application/pdf
اللغة: English
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f738aef92f34646b31893ec1828c9a8
https://epub.uni-regensburg.de/39173/
حقوق: OPEN
رقم الأكسشن: edsair.doi.dedup.....5f738aef92f34646b31893ec1828c9a8
قاعدة البيانات: OpenAIRE