Cracking mechanisms in lithiated silicon thin film electrodes

التفاصيل البيبلوغرافية
العنوان: Cracking mechanisms in lithiated silicon thin film electrodes
المؤلفون: Shuman Xia, Huck Beng Chew, Binyue Hou, Xueju Wang
المصدر: International Journal of Solids and Structures. (23-24):4176-4187
بيانات النشر: Elsevier Ltd.
مصطلحات موضوعية: Amorphous silicon, Sequential cracking, Materials science, Silicon, chemistry.chemical_element, Stress (mechanics), chemistry.chemical_compound, Materials Science(all), Modelling and Simulation, Ultimate tensile strength, Forensic engineering, General Materials Science, Thin film, Composite material, Lithiation-induced stress, Mechanical Engineering, Applied Mathematics, Finite element analysis, Condensed Matter Physics, Lithium ion battery, Cracking, chemistry, Mechanics of Materials, Silicon islands, Modeling and Simulation, Tension (geology), Fracture (geology)
الوصف: The massive cracking of silicon thin film electrodes in lithium ion batteries is associated with the colossal volume changes that occur during lithiation and delithiation cycles. However, the underlying cracking mechanism or even whether fracture initiates during lithiation or delithiation is still unknown. Here, we model the stress generation in amorphous silicon thin films during lithium insertion, fully accounting for the effects of finite strains, plastic flow, and pressure-gradients on the diffusion of lithium. Our finite element analyses demonstrate that the fracture of lithiated silicon films occurs by a sequential cracking mechanism which is distinct from fracture induced by residual tension in conventional thin films. During early-stage lithiation, the expansion of the lithium-silicon subsurface layer bends the film near the edges, and generates a high tensile stress zone at a critical distance away within the lithium-free silicon. Fracture initiates at this high tension zone and creates new film edges, which in turn bend and generate high tensile stresses a further critical distance away. Under repeated lithiation and delithiation cycles, this sequential cracking mechanism creates silicon islands of uniform diameter, which scales with the film thickness. The predicted island sizes, as well as the abrupt mitigation of fracture below a critical film thickness due to the diminishing tensile stress zone, is quantitatively in good agreement with experiments.
اللغة: English
تدمد: 0020-7683
DOI: 10.1016/j.ijsolstr.2014.08.008
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62663c29f70980493165b49af2fea051
حقوق: OPEN
رقم الأكسشن: edsair.doi.dedup.....62663c29f70980493165b49af2fea051
قاعدة البيانات: OpenAIRE
الوصف
تدمد:00207683
DOI:10.1016/j.ijsolstr.2014.08.008