Magnetotransport and conductivity mechanisms in Cu2ZnSnxGe1−xS4 single crystals
العنوان: | Magnetotransport and conductivity mechanisms in Cu2ZnSnxGe1−xS4 single crystals |
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المؤلفون: | Erkki Lähderanta, K. G. Lisunov, I. Zakharchuk, M. A. Shakhov, Maxim Guc, E. Hajdeu-Chicarosh, I. V. Bodnar, Ernest Arushanov |
المصدر: | Scientific Reports Scientific Reports, Vol 8, Iss 1, Pp 1-11 (2018) |
بيانات النشر: | Nature Publishing Group UK, 2018. |
سنة النشر: | 2018 |
مصطلحات موضوعية: | Multidisciplinary, Materials science, Condensed matter physics, Magnetoresistance, Fermi level, lcsh:R, lcsh:Medicine, 02 engineering and technology, Conductivity, Atmospheric temperature range, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Acceptor, Article, 0104 chemical sciences, Crystal, symbols.namesake, Delocalized electron, Electrical resistivity and conductivity, symbols, lcsh:Q, 0210 nano-technology, lcsh:Science |
الوصف: | Resistivity, ρ(T), and magnetoresistance (MR) are investigated in the Cu2ZnSnxGe1−xS4 single crystals, obtained by the chemical vapor transport method, between x = 0–0.70, in the temperature range of T ~ 50–300 K in pulsed magnetic field of B up to 20 T. The Mott variable-range hopping (VRH) conductivity is observed within broad temperature intervals, lying inside that of T ~ 80–180 K for different x. The nearest-neighbor hopping conductivity and the charge transfer, connected to activation of holes into the delocalized states of the acceptor band, are identified above and below the Mott VRH conduction domain, respectively. The microscopic electronic parameters, including width of the acceptor band, the localization radius and the density of the localized states at the Fermi level, as well as the acceptor concentration and the critical concentration of the metal-insulator transition, are obtained with the analysis of the ρ(T) and MR data. All the parameters above exhibit extremums near x = 0.13, which are attributable mainly to the transition from the stannite crystal structure at x = 0 to the kesterite-like structure near x = 0.13. The detailed analysis of the activation energy in the low-temperature interval permitted estimations of contributions from different crystal phases of the border compounds into the alloy structure at different compositions. |
اللغة: | English |
تدمد: | 2045-2322 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64f829d1f9f1d269a131d15a55bec7eb http://europepmc.org/articles/PMC6269520 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi.dedup.....64f829d1f9f1d269a131d15a55bec7eb |
قاعدة البيانات: | OpenAIRE |
تدمد: | 20452322 |
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