2D MoS2 Encapsulated Silicon Nanopillar Array with High-Performance Light Trapping Obtained by Direct CVD Process
| العنوان: | 2D MoS2 Encapsulated Silicon Nanopillar Array with High-Performance Light Trapping Obtained by Direct CVD Process |
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| المؤلفون: | Shuai Wen, Peiru Zhang, Zhuoman Wang, Fei Xie, Minyu Bai, Huan Liu, Jijie Zhao |
| المصدر: | Crystals Volume 11 Issue 3 Crystals, Vol 11, Iss 267, p 267 (2021) |
| بيانات النشر: | Multidisciplinary Digital Publishing Institute, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Silicon, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), Chemical vapor deposition, 010402 general chemistry, 01 natural sciences, Inorganic Chemistry, lcsh:QD901-999, Transmittance, Deposition (phase transition), General Materials Science, Absorption (electromagnetic radiation), Nanopillar, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, CVD, Ray, 0104 chemical sciences, chemistry, nano pillar array substrate, Optoelectronics, encapsulation, lcsh:Crystallography, 0210 nano-technology, business, absorption, 2D MoS2 |
| الوصف: | Weak absorption remains a vital factor that limits the application of two-dimensional (2D) materials due to the atomic thickness of those materials. In this work, a direct chemical vapor deposition (CVD) process was applied to achieve 2D MoS2 encapsulation onto the silicon nanopillar array substrate (NPAS). Single-layer 2D MoS2 monocrystal sheets were obtained, and the percentage of the encapsulated surface of NPAS was up to 80%. The reflection and transmittance of incident light of our 2D MoS2-encapsulated silicon substrate within visible to shortwave infrared were significantly reduced compared with the counterpart planar silicon substrate, leading to effective light trapping in NPAS. The proposed method provides a method of conformal deposition upon NPAS that combines the advantages of both 2D MoS2 and its substrate. Furthermore, the method is feasible and low-cost, providing a promising process for high-performance optoelectronic device development. |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 2073-4352 |
| DOI: | 10.3390/cryst11030267 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66a8487e93f922bfd10906840ee5a4b8 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....66a8487e93f922bfd10906840ee5a4b8 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20734352 |
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| DOI: | 10.3390/cryst11030267 |