Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation
| العنوان: | Immunity of nanoscale magnetic tunnel junctions with perpendicular magnetic anisotropy to ionizing radiation |
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| المؤلفون: | Mikael Nilsson, Patrick M. Braganca, Han Kyu Lee, Jen-Ru Chen, Ilya Krivorotov, Eric Montoya, Lei Wan, Hsin-Wei Tseng, Ozdal Boyraz, En Yang, Randy Ngelale, Nader Bagherzadeh |
| المصدر: | Scientific reports, vol 10, iss 1 Scientific Reports Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020) |
| بيانات النشر: | eScholarship, University of California, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Materials science, Magnetoresistance, lcsh:Medicine, 02 engineering and technology, Radiation, 01 natural sciences, Article, Computer Science::Hardware Architecture, Magnetic properties and materials, Electronic and spintronic devices, 0103 physical sciences, Irradiation, Experimental nuclear physics, lcsh:Science, Quantum tunnelling, 010302 applied physics, Multidisciplinary, Spintronics, business.industry, lcsh:R, Spin-transfer torque, Neutron radiation, 021001 nanoscience & nanotechnology, Magnetic field, Optoelectronics, lcsh:Q, 0210 nano-technology, business |
| الوصف: | Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the nanoscale magnetic tunneling junction (MTJ), is thought to be radiation hard, making it attractive for space and nuclear technology applications. However, studies on the effects of ionizing radiation on the STT-MRAM writing process are lacking for MTJs with perpendicular magnetic anisotropy (pMTJs) required for scalable applications. Particularly, the question of the impact of extreme total ionizing dose on perpendicular magnetic anisotropy, which plays a crucial role on thermal stability and critical writing current, remains open. Here we report measurements of the impact of high doses of gamma and neutron radiation on nanoscale pMTJs used in STT-MRAM. We characterize the tunneling magnetoresistance, the magnetic field switching, and the current-induced switching before and after irradiation. Our results demonstrate that all these key properties of nanoscale MTJs relevant to STT-MRAM applications are robust against ionizing radiation. Additionally, we perform experiments on thermally driven stochastic switching in the gamma ray environment. These results indicate that nanoscale MTJs are promising building blocks for radiation-hard non-von Neumann computing. |
| وصف الملف: | application/pdf |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68ce0eb70187c9b24bb35f50a74fd9f9 https://escholarship.org/uc/item/2q42x7fp |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....68ce0eb70187c9b24bb35f50a74fd9f9 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |