Reduced Thermal Variation of Perpendicular Magnetic Anisotropy in Magnetically Stiffened Dual-W Composite Storage Layer for Spin-Transfer-Torque Magnetic Random-Access Memory

التفاصيل البيبلوغرافية
العنوان: Reduced Thermal Variation of Perpendicular Magnetic Anisotropy in Magnetically Stiffened Dual-W Composite Storage Layer for Spin-Transfer-Torque Magnetic Random-Access Memory
المؤلفون: Ricardo C. Sousa, F. Fettar, Lucian Prejbeanu, Clarisse Ducruet, Stéphane Auffret, Bernard Dieny, I. Joumard, A. Chavent, Jyotirmoy Chatterjee, Laurent Vila
المساهمون: SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Surfaces, Interfaces et Nanostructures (SIN ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), CROCUS Technology, Surfaces, Interfaces et Nanostructures (NEEL - SIN)
المصدر: Physical Review Applied
Physical Review Applied, American Physical Society, 2019, 12 (4), pp.044043. ⟨10.1103/PhysRevApplied.12.044043⟩
Physical Review Applied, 2019, 12 (4), pp.044043. ⟨10.1103/PhysRevApplied.12.044043⟩
بيانات النشر: HAL CCSD, 2019.
سنة النشر: 2019
مصطلحات موضوعية: [PHYS]Physics [physics], Materials science, Condensed matter physics, Spintronics, Composite number, Spin-transfer torque, General Physics and Astronomy, chemistry.chemical_element, Stiffness, 02 engineering and technology, Tungsten, 021001 nanoscience & nanotechnology, 01 natural sciences, Tunnel magnetoresistance, Ferromagnetism, chemistry, 0103 physical sciences, medicine, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], medicine.symptom, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, Layer (electronics), ComputingMilieux_MISCELLANEOUS
الوصف: This article reports a type of magnetic tunnel junction (MTJ) with an expanded middle layer, for spin-transfer-torque magnetic random-access memory (STT-MRAM). This data-storage layer of the form Fe-Co-B/W/Co/W/Fe-Co-B sandwiches a ferromagnet with high exchange stiffness between two tungsten films, and thus is much less sensitive to temperature than that in a conventional MTJ. Such a storage layer is promising for spintronic memory that must operate across a wide range of temperatures, as in automobile applications.
اللغة: English
تدمد: 2331-7019
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68e23976556b7706e7121cee50a046a4
https://hal-cea.archives-ouvertes.fr/cea-02394858
حقوق: CLOSED
رقم الأكسشن: edsair.doi.dedup.....68e23976556b7706e7121cee50a046a4
قاعدة البيانات: OpenAIRE