Tuning the Granular Contribution to Exchange Bias by Varying the Antiferromagnetic Material but Without Affecting the Ferromagnetic/Antiferromagnetic Interface

التفاصيل البيبلوغرافية
العنوان: Tuning the Granular Contribution to Exchange Bias by Varying the Antiferromagnetic Material but Without Affecting the Ferromagnetic/Antiferromagnetic Interface
المؤلفون: L. Frangou, I. Joumard, K. Akmaldinov, Vincent Baltz, Bernard Dieny, Clarisse Ducruet
المساهمون: SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CROCUS Technology
المصدر: 20th International Conference on Magnetism ICM
20th International Conference on Magnetism ICM, 2015, Barcelona, Spain. pp.1058-1065, ⟨10.1016/j.phpro.2015.12.175⟩
بيانات النشر: Elsevier BV, 2015.
سنة النشر: 2015
مصطلحات موضوعية: volume, Materials science, Spins, Spintronics, Condensed matter physics, Context (language use), Physics and Astronomy(all), TA-MRAM, Exchange bias, Ferromagnetism, exchange bias, blocking temperature distribution, interface, Antiferromagnetism, Thermal stability, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Diffusion (business)
الوصف: International audience; The exchange bias properties of ferromagnetic/antiferromagnetic (F/AF) bilayers depend strongly on both the F and AF bulk properties, and the interfacial uncompensated AF spins that magnetically couple the F and the AF materials. Whether it is possible to adjust the bulk properties of the AF layer by changing the nature of the AF material but without affecting the interface is one of the challenges raised by the development of some spintronic devices. In this context, we engineered composite AF materials whose basic composition is: (FeMn/Pt/AF). These structures are made of FeMn and IrMn alloys with the insertion of a thin Pt diffusion/trap barrier to Mn in order to ensure as much as possible the integrity of the AF layer at the interface. Magnetic measurements evidenced that, by changing the nature of the AF material, it remains possible to tune the thermal stability of the AF grains without affecting much the interface.
تدمد: 1875-3892
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a41d13a70eb06744e099f321a2f6a7d
https://doi.org/10.1016/j.phpro.2015.12.175
حقوق: OPEN
رقم الأكسشن: edsair.doi.dedup.....6a41d13a70eb06744e099f321a2f6a7d
قاعدة البيانات: OpenAIRE