Phase formation sequence and cobalt behavior in the Ni0.9 Co0.1 system during the thin film solid-state formation
| العنوان: | Phase formation sequence and cobalt behavior in the Ni0.9 Co0.1 system during the thin film solid-state formation |
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| المؤلفون: | Patrice Gergaud, F. Deprat, Claire Fenouillet-Beranger, S. Favier, Fabrice Nemouchi, Ph. Rodriguez, Dominique Mangelinck, S. Zhiou, Ting Luo, C. Sese |
| المساهمون: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU) |
| المصدر: | Microelectronic Engineering Microelectronic Engineering, 2018, 200, pp.19-25. ⟨10.1016/j.mee.2018.08.006⟩ Microelectronic Engineering, Elsevier, 2018, 200, pp.19-25. ⟨10.1016/j.mee.2018.08.006⟩ |
| بيانات النشر: | HAL CCSD, 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, Substrate (electronics), 01 natural sciences, chemistry.chemical_compound, Phase (matter), 0103 physical sciences, Silicide, Thermal stability, Electrical and Electronic Engineering, Thin film, Sheet resistance, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [CHIM.MATE]Chemical Sciences/Material chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Chemical engineering, 0210 nano-technology, Cobalt |
| الوصف: | In this work, the solid-state reaction between a 7 nm thick Ni0.9Co0.1 film and a silicon substrate has been studied. By combining various characterization methods (e.g. sheet resistance measurement, X-ray reflectivity, X-ray diffraction), a comprehensive phase sequence of the NiCo silicide formation has been proposed. At low temperature, we observed the formation of metal-rich Ni2Si-like phases: δ-(NiCo)2Si and θ-(NiCo)2Si. Contrary to Ni0.9Pt0.1 based silicides, the δ-Ni2Si phase appears before the θ-Ni2Si one. Beyond 320 °C, the (NiCo)Si monosilicide formation is initiated and this latter is complete at 400 °C. The presence of Co strongly decreases the NiSi2 formation temperature. This early formation of disilicide allows avoiding film agglomeration and enhances the thermal stability of NiSi silicide. Complementary studies using wavelength dispersive X-ray fluorescence allowed studying the cobalt behavior and highlighted the formation of a Co composition gradient into the metal-rich silicide phases at relatively low temperature (220–260 °C). |
| اللغة: | English |
| تدمد: | 0167-9317 1873-5568 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b7d2e666efd754794564754f9d67497 https://hal.science/hal-02403223 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....6b7d2e666efd754794564754f9d67497 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 01679317 18735568 |
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