In situ cleaning/passivation of surfaces for contact technology on III-V materials
| العنوان: | In situ cleaning/passivation of surfaces for contact technology on III-V materials |
|---|---|
| المؤلفون: | Fabrice Nemouchi, Philippe Rodriguez, Névine Rochat, Laura Toselli, Eugénie Martinez, E. Ghegin |
| المساهمون: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), ANR-13-NANO-0001,MOSINAS,MOSFET à hétérostructure et film ultra mince d'InAs sur substrat silicium(2013), ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010) |
| المصدر: | 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.107-110, ⟨10.1109/IITC-MAM.2015.7325643⟩ |
| بيانات النشر: | HAL CCSD, 2015. |
| سنة النشر: | 2015 |
| مصطلحات موضوعية: | 010302 applied physics, In situ, Materials science, Passivation, Silicon, business.industry, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, chemistry, X-ray photoelectron spectroscopy, Attenuated total reflection, 0103 physical sciences, Optoelectronics, Fourier transform infrared spectroscopy, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, Indium gallium arsenide |
| الوصف: | International audience; In this work we introduce the use of physical plasmas (e.g. Ar-and He-based plasmas) in order to study the in situ cleaning (prior to metal deposition) of InGaAs layers dedicated to the realisation of self-aligned contacts. For the characterisation of cleaning efficiency, we performed surface analyses like X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy in attenuated total reflection mode. The first results described in this work are encouraging. We have found efficient processes for removing totally or partially III-V native oxides. |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cd74483ecb8d90e6731c82dc8c6726a https://hal-cea.archives-ouvertes.fr/cea-01615586/document |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....6cd74483ecb8d90e6731c82dc8c6726a |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |