Experimental and theoretical study of misfit dislocation development in low-mismatched heterostructures: Application to GaAs/Ge
| العنوان: | Experimental and theoretical study of misfit dislocation development in low-mismatched heterostructures: Application to GaAs/Ge |
|---|---|
| المؤلفون: | N. Burle, B. Pichaud, Magali Putero |
| المساهمون: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| المصدر: | Philosophical Magazine a-Physics of Condensed Matter Structure Defects and Mechanical Properties Philosophical Magazine a-Physics of Condensed Matter Structure Defects and Mechanical Properties, 1999, 79 (11), pp.2711-2724. ⟨10.1080/01418619908212019⟩ |
| بيانات النشر: | Informa UK Limited, 1999. |
| سنة النشر: | 1999 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), 02 engineering and technology, Epitaxy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Condensed Matter::Materials Science, Metastability, 0103 physical sciences, Stress relaxation, General Materials Science, Thin film, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Condensed matter physics, business.industry, Metals and Alloys, Heterojunction, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Crystallography, Semiconductor, Relaxation (physics), Dislocation, 0210 nano-technology, business |
| الوصف: | The metastability of thin epitaxial layers on very-high-quality substrates is usual in semiconductor systems. A numerical study of the first relaxation stage in low-misfit heterostructures is proposed and applied to the GaAs/Ge system. It is shown that growth conditions as well as cooling conditions are essential in determining the final state and the relaxation rate at ambient conditions. |
| تدمد: | 1460-6992 0141-8610 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d0339de5e28e30df83b3e1802fa0541 https://doi.org/10.1080/01418619908212019 |
| رقم الأكسشن: | edsair.doi.dedup.....6d0339de5e28e30df83b3e1802fa0541 |
| قاعدة البيانات: | OpenAIRE |
PDF full text from Publisher | تدمد: | 14606992 01418610 |
|---|