Pulsed laser deposition of amorphous InGaZnO4 as an electron transport layer for perovskite solar cells
| العنوان: | Pulsed laser deposition of amorphous InGaZnO4 as an electron transport layer for perovskite solar cells |
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| المؤلفون: | Zhenggang Rao, Chun Huang, Longlong Shu, Peng Lin, Bukui Du, Yongming Hu, Shanming Ke |
| المصدر: | Journal of Advanced Dielectrics, Vol 9, Iss 5, Pp 1950042-1-1950042-6 (2019) |
| بيانات النشر: | World Scientific Pub Co Pte Lt, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Electron transport layer, Materials science, business.industry, lcsh:QC501-721, Phot, 02 engineering and technology, electron transport layer, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, perovskite solar cells, 01 natural sciences, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Amorphous solid, Pulsed laser deposition, lcsh:Electricity, Ceramics and Composites, Optoelectronics, amorphous ingazno4, Electrical and Electronic Engineering, 0210 nano-technology, business, pulsed laser deposition, Perovskite (structure) |
| الوصف: | Hybrid perovskite solar cells (PSCs) have been intensively studied in recent years because of their high efficiency and low costs. For PSCs, the electron transport layer (ETL) is a key for its photoelectric conversion efficiency. Here we demonstrate the application of amorphous InGaZnO4 thin films as ETL for efficient PSCs by pulsed laser deposition (PLD). The PSC device using such InGaZnO4 amorphous film as ETL has achieved an efficiency of 15.1%. The outstanding performance is attributed to the excellent properties of amorphous InGaZnO4 oxide thin films, including high electron mobility and high transparency, what is more, the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process. Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method. |
| تدمد: | 2010-1368 2010-135X |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e2287a68e56af5d5b8b2d93f4ad72f6 https://doi.org/10.1142/s2010135x19500425 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....6e2287a68e56af5d5b8b2d93f4ad72f6 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20101368 2010135X |
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