Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
| العنوان: | Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC |
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| المؤلفون: | R. A. Minamisawa, Francesco Moscatelli, Paolo Fedeli, Ulrike Grossner, Maurizio Puzzanghera, Roberta Nipoti, Giovanni Alfieri |
| المصدر: | 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016, pp. 391–394, 25-29 September 2016 info:cnr-pdr/source/autori:Fedeli P.; Puzzanghera M.; Moscatelli F.; Minamisawa R.A.; Alfieri G.; Grossner U.; Nipoti R./congresso_nome:11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016/congresso_luogo:/congresso_data:25-29 September 2016/anno:2017/pagina_da:391/pagina_a:394/intervallo_pagine:391–394 |
| بيانات النشر: | Trans Tech Publications, Ltd., 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Ni-Ti-Al ohmic contacts, Mechanical Engineering, Bilayer, Contact resistance, Metallurgy, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, p-type 4H-SiC, 01 natural sciences, Specific contact resistance, Mechanics of Materials, 0103 physical sciences, General Materials Science, Atomic ratio, 0210 nano-technology, Layer (electronics), Ohmic contact |
| الوصف: | This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable forohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×1020 cm-3 Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10-6 Ωcm2. |
| تدمد: | 1662-9752 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::750b2ca609f3745a6f8198994bd83602 https://doi.org/10.4028/www.scientific.net/msf.897.391 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....750b2ca609f3745a6f8198994bd83602 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 16629752 |
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