Monolithic III-V/Si Integration
| العنوان: | Monolithic III-V/Si Integration |
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| المؤلفون: | Dmitri Lubyshev, M. Urtega, J. Bergman, W. K. Liu, Joel M. Fastenau, Mayank T. Bulsara, Fabrice Letertre, Y. Wu, W. Ha, Bobby Brar, William E. Hoke, Charlotte Drazek, Yu Bai, Cheng-Wei Cheng, T.E. Kazior, K.J. Herrick, Nicolas Daval, Eugene A. Fitzgerald, J.R. LaRoche |
| المصدر: | ECS Transactions. 16:1015-1020 |
| بيانات النشر: | The Electrochemical Society, 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Fabrication, Materials science, Silicon, business.industry, Heterojunction bipolar transistor, Analytical chemistry, chemistry.chemical_element, Substrate (electronics), Hardware_PERFORMANCEANDRELIABILITY, Gallium arsenide, chemistry.chemical_compound, chemistry, CMOS, Process integration, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Electronics, business |
| الوصف: | We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al2O3/GaAs process for III-V MOS. |
| تدمد: | 1938-6737 1938-5862 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7635c4bf27c275030c141eb864dd3365 https://doi.org/10.1149/1.2986863 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....7635c4bf27c275030c141eb864dd3365 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19386737 19385862 |
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