Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide
| العنوان: | Interface engineering of the photoelectrochemical performance of Ni-oxide-coated n-Si photoanodes by atomic-layer deposition of ultrathin films of cobalt oxide |
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| المؤلفون: | Stefan T. Omelchenko, Fadl H. Saadi, Fan Yang, Adam C. Nielander, Kimberly M. Papadantonakis, Xinghao Zhou, Matthew T. McDowell, Ke Sun, Dennis Friedrich, Rui Liu, Nathan S. Lewis, Bruce S. Brunschwig, Sisir Yalamanchili |
| المصدر: | Energy & Environmental Science. 8:2644-2649 |
| بيانات النشر: | Royal Society of Chemistry (RSC), 2015. |
| سنة النشر: | 2015 |
| مصطلحات موضوعية: | Shockley diode, Materials science, Renewable Energy, Sustainability and the Environment, Doping, Non-blocking I/O, Nanotechnology, engineering.material, Ni oxide, Pollution, Solar fuels, Atomic layer deposition, Nuclear Energy and Engineering, Coating, Chemical engineering, Electrode, engineering, Environmental Chemistry, Cobalt oxide |
| الوصف: | Introduction of an ultrathin (2 nm) film of cobalt oxide (CoO_x) onto n-Si photoanodes prior to sputter-deposition of a thick multifunctional NiO_x coating yields stable photoelectrodes with photocurrent-onset potentials of ~−240 mV relative to the equilibrium potential for O2(g) evolution and current densities of ~28 mA cm^(−2) at the equilibrium potential for water oxidation when in contact with 1.0 M KOH(aq) under 1 sun of simulated solar illumination. The photoelectrochemical performance of these electrodes was very close to the Shockley diode limit for moderately doped n-Si(100) photoelectrodes, and was comparable to that of typical protected Si photoanodes that contained np+ buried homojunctions. |
| وصف الملف: | application/pdf |
| تدمد: | 1754-5706 1754-5692 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81ce725233c7420d584037e0795e59c5 https://doi.org/10.1039/c5ee01687h |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....81ce725233c7420d584037e0795e59c5 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17545706 17545692 |
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