Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems
| العنوان: | Elemental Dislocation Mechanisms Involved in the Relaxation of Heteroepitaxial Semiconducting Systems |
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| المؤلفون: | Magali Putero, B. Pichaud, N Burle |
| المساهمون: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU) |
| المصدر: | physica status solidi (a) physica status solidi (a), 1999, 171 (1), pp.251-265. ⟨10.1002/(SICI)1521-396X(199901)171:13.0.CO;2-9⟩ physica status solidi (a), Wiley, 1999, 171 (1), pp.251-265. ⟨10.1002/(SICI)1521-396X(199901)171:13.0.CO;2-9⟩ |
| بيانات النشر: | Wiley, 1999. |
| سنة النشر: | 1999 |
| مصطلحات موضوعية: | Dislocation creep, Crystallography, Materials science, Condensed matter physics, Nucleation, Relaxation (physics), Dislocation, Condensed Matter Physics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials, Electronic, Optical and Magnetic Materials |
| الوصف: | Laboratoire MATOP associe´ au CNRS,Faculte´ des Sciences et Techniques de St. Je´roˆme, F-13397 Marseille Cedex 20, France(Received September 22, 1998)Different elemental dislocation mechanisms are considered and we try to highlight their specialbehaviour in relation to the layer geometry. The nucleation of misfit dislocations is the first step,we show here that the mechanism proposed by Matthews et al. can actually be observed in lowmisfit systems. The development of dislocations is then studied and we underline some particularproblems which could influence the dislocation length: the role of the cooling step and of the un-certainty on G |
| تدمد: | 1521-396X 0031-8965 1862-6319 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85fe2988a5103cea5d154b8797b0c7c7 https://doi.org/10.1002/(sici)1521-396x(199901)171:1<251::aid-pssa251>3.0.co;2-9 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....85fe2988a5103cea5d154b8797b0c7c7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1521396X 00318965 18626319 |
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