Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line
| العنوان: | Indium-oxide nanoparticles for Ox-RRAM in CMOS back-end-off-line |
|---|---|
| المؤلفون: | Thierry Baron, Nicolas Baboux, Edgar A. A. Leon Perez, Abdelkader Souifi, L. Militaru, Khaled Ayadi, J. Moeyaert, Oumaima Abouzaid, Pierre-Vincent Guenery |
| المساهمون: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), INL - Plateforme Technologique Nanolyon (INL - Nanolyon), Clot, Marielle, Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Inl, Laboratoire INL UMR5270 |
| المصدر: | EUROSOI-ULIS, 2017 EUROSOI-ULIS, 2017, Jan 2017, Athens, Greece EUROSOI-ULIS EUROSOI-ULIS, 2017, pp.47-50 |
| بيانات النشر: | HAL CCSD, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | [PHYS.PHYS.PHYS-OPTICS] Physics [physics]/Physics [physics]/Optics [physics.optics], Materials science, Fabrication, [SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Oxide, Nanoparticle, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, [SPI.MAT] Engineering Sciences [physics]/Materials, 01 natural sciences, law.invention, [PHYS] Physics [physics], [SPI.MAT]Engineering Sciences [physics]/Materials, chemistry.chemical_compound, law, Hardware_GENERAL, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, [PHYS]Physics [physics], [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], 021001 nanoscience & nanotechnology, Resistive random-access memory, Non-volatile memory, Capacitor, CMOS, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Indium |
| الوصف: | 3-5 April 2017; International audience; We report on the fabrication and characterization of Resistive Random Access Memory (RRAM) devices based on nanoparticles with a memory capacitor structure. Our approach is based on the use of indium oxide (In2O3) nanoparticles (or nanocrystals NCs) embedded in a dielectric matrix as a charge trapping layer using CMOS-full-compatible fabrication processes in view of back-end-off-line integration for non-volatile memory (NVM) applications. Current-voltage characteristics (I-V) showed bipolar switching behavior for all the fabricated devices, with ION/IOFF ratios up to 105. Moreover, our best structure yields up to 24 write/erase cycles, proving that our results provide insights for further integration of In2O3 nanoparticles-based devices. |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89d845a023f3e5c7d065b6dd1393c4a6 https://hal.archives-ouvertes.fr/hal-01701469 |
| رقم الأكسشن: | edsair.doi.dedup.....89d845a023f3e5c7d065b6dd1393c4a6 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |