أعرض في EDS

Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide

التفاصيل البيبلوغرافية
العنوان: Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide
المؤلفون: Deying Kong, Yu Zhang, Dali Cheng, Enze Wang, Kaiyuan Zhang, Huachun Wang, Kai Liu, Lan Yin, Xing Sheng
المصدر: ACS Applied Materials & Interfaces. 14:52508-52515
بيانات النشر: American Chemical Society (ACS), 2022.
سنة النشر: 2022
مصطلحات موضوعية: Condensed Matter - Materials Science, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Materials Science, Applied Physics (physics.app-ph), Physics - Applied Physics
الوصف: Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films at a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr3) films on lattice-matched gallium arsenide (GaAs) substrates at a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr3/PbS/GaAs epi-structure and confirm the monocrystalline nature of MAPbBr3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.
تدمد: 1944-8252
1944-8244
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ea95f8c2986fe8dc8d8793e556ced20
https://doi.org/10.1021/acsami.2c15243
حقوق: OPEN
رقم الأكسشن: edsair.doi.dedup.....8ea95f8c2986fe8dc8d8793e556ced20
قاعدة البيانات: OpenAIRE
الوصف
تدمد:19448252
19448244