High Quality Al-Polar AlN Growth on (0001) Sapphire Using Polarity-Selective Thermal Etching by High Temperature Metalorganic Chemical Vapor Deposition
| العنوان: | High Quality Al-Polar AlN Growth on (0001) Sapphire Using Polarity-Selective Thermal Etching by High Temperature Metalorganic Chemical Vapor Deposition |
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| المؤلفون: | Jaedo Pyeon, Jinwan Kim, Kyungjae Lee, Daeyong Eom, Okhyun Nam, Cheon Heo, Minhwan Jeon |
| المصدر: | Journal of Nanoscience and Nanotechnology. 15:8401-8406 |
| بيانات النشر: | American Scientific Publishers, 2015. |
| سنة النشر: | 2015 |
| مصطلحات موضوعية: | Fabrication, Aqueous solution, Materials science, Biomedical Engineering, Bioengineering, Nanotechnology, General Chemistry, Chemical vapor deposition, Condensed Matter Physics, Grain size, Etching (microfabrication), Thermal, Sapphire, General Materials Science, Composite material, Layer (electronics) |
| الوصف: | In this study, we suggest a polarity-selective in-situ thermal etching and re-growth process for the fabrication of high quality Al terminated AIN epilayers by high temperature metalorganic chemical vapor deposition. Mixed-polar AIN layers grown on a thin (5 nm) buffer layer at a high temperature (950 degrees C) exhibited high crystalline quality. Surface morphologies of in-situ thermally etched AIN layers depended on the grain size and distance between grains. Increasing the initial grain size and diminishing the space between grains increased etching depth and width. During re-growth, threading dislocations were bent and annihilated in the vicinity of voids, which were formed by lateral growth of Al-polar AIN regions after thermal etching. Finally, a high quality Al-polar AIN template, as verified by an aqueous KOH solution, was successfully fabricated. |
| تدمد: | 1533-4899 1533-4880 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93ad65ecf8ff0d702399cb5757363ab4 https://doi.org/10.1166/jnn.2015.11446 |
| رقم الأكسشن: | edsair.doi.dedup.....93ad65ecf8ff0d702399cb5757363ab4 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15334899 15334880 |
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