A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology
| العنوان: | A monolithic active pixel sensor for charged particle tracking and imaging using standard VLSI CMOS technology |
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| المؤلفون: | C. Colledani, Marc Winter, D. Husson, Gilles Claus, Yann Hu, J. P. Le Normand, Renato Turchetta, W. Dulinski, B. Casadei, J.L. Riester, J.D. Berst, Ulrich Goerlach, Grzegorz Deptuch, S. Higueret |
| المساهمون: | Institut de Recherches Subatomiques (IReS), Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Cancéropôle du Grand Est-Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS) |
| المصدر: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2001, 458, pp.677-689 |
| بيانات النشر: | Elsevier BV, 2001. |
| سنة النشر: | 2001 |
| مصطلحات موضوعية: | Physics, Nuclear and High Energy Physics, CMOS sensor, Pixel, Physics::Instrumentation and Detectors, business.industry, Detector, Integrated circuit, Tracking (particle physics), Photodiode, law.invention, CMOS, law, Optoelectronics, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], Particle physics experiments, business, Instrumentation |
| الوصف: | A novel Monolithic Active Pixel Sensor (MAPS) for charged particle tracking made in a standard CMOS technology is proposed. The sensor is a photodiode, which is readily available in a CMOS technology. The diode has a special structure, which allows the high detection efficiency required for tracking applications. The partially depleted thin epitaxial silicon layer is used as a sensitive detector volume. Semiconductor device simulation, using either ToSCA based or 3-D ISE-TCAD software packages shows that the charge collection is efficient, reasonably fast (order of 100 ns), and the charge spreading limited to a few pixels only. A first prototype has been designed, fabricated and tested. It is made of four arrays each containing 64×64 pixels, with a readout pitch of 20 μm in both directions. The device is fabricated using standard submicron 0.6 μm CMOS process, which features twin-tub implanted in a p-type epitaxial layer, a characteristic common to many modern CMOS VLSI processes. Extensive tests made with soft X-ray source ( 55 Fe) and minimum ionising particles (15 GeV/ c pions) fully demonstrate the predicted performances, with the individual pixel noise (ENC) below 20 electrons and the Signal-to-Noise ratio for both 5.9 keV X-rays and Minimum Ionising Particles (MIP) of the order of 30. This novel device opens new perspectives in high-precision vertex detectors in Particle Physics experiments, as well as in other application, like low-energy beta particle imaging, visible light single photon imaging (using the Hybrid Photon Detector approach) and high-precision slow neutron imaging. |
| تدمد: | 0168-9002 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9895fa9dd06d8539382fa8ad5f17eec0 https://doi.org/10.1016/s0168-9002(00)00893-7 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....9895fa9dd06d8539382fa8ad5f17eec0 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 01689002 |
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