Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources
| العنوان: | Roles of Atomic Nitrogen/Hydrogen in GaN Film Growth by Chemically Assisted Sputtering with Dual Plasma Sources |
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| المؤلفون: | Osamu Oda, Takahiro Kimura, Kazuo Kinose, Shigeru Takatsuji, Masaru Hori, Soichi Nadahara, Akira Horikoshi, Masazumi Nishikawa, Kenji Ishikawa, Akinori Ebe, Atsushi Tanide, Shohei Nakamura |
| المصدر: | ACS Omega, Vol 5, Iss 41, Pp 26776-26785 (2020) ACS Omega |
| بيانات النشر: | American Chemical Society, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Materials science, Hydrogen, business.industry, General Chemical Engineering, chemistry.chemical_element, General Chemistry, Plasma, High-electron-mobility transistor, Nitrogen, Article, Dual (category theory), Chemistry, chemistry, Sputtering, Optoelectronics, business, QD1-999 |
| الوصف: | The growth of sputtered GaN at low temperature is strongly desired to realize the dissemination of low-cost GaN high electron mobility transistor devices for next-generation communication technology. In this work, the roles of atomic nitrogen (N)/hydrogen (H) in GaN film growth on AlN/sapphire substrates by chemically assisted dual source sputtering are studied at a low growth temperature of 600 °C under a pressure of 2 Pa using vacuum ultraviolet absorption spectroscopy. The lateral growth was strongly enhanced with an appropriate H/N flux ratio of 1.9 at a GaN growth rate of ∼1 μm h–1. X-ray photoelectron spectroscopy measurements indicated that N removal from the grown GaN surface by atomic hydrogen promoted the migration of Ga. A smooth GaN surface was achieved at a suitable N/Ga supply ratio of 53 and a H/N ratio of 1.9 with the addition of 0.5% chlorine to the Ar sputtering gas. |
| اللغة: | English |
| تدمد: | 2470-1343 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c35ada60a7ba84b749d4b3bb37526c8 https://doaj.org/article/245b6caa49c940b58b51a3d5470b652a |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....9c35ada60a7ba84b749d4b3bb37526c8 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 24701343 |
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