Hot-phonon effects in photo-excited wide-bandgap semiconductors
| العنوان: | Hot-phonon effects in photo-excited wide-bandgap semiconductors |
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| المؤلفون: | Steffen Blaurock, Harald Krautscheid, Marius Grundmann, Evgeny Krüger, Oliver Herrfurth |
| المصدر: | Journal of Physics: Condensed Matter. 33:205701 |
| بيانات النشر: | IOP Publishing, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Condensed matter physics, business.industry, Phonon, Relaxation (NMR), Wide-bandgap semiconductor, Physics::Optics, Electron, semiconductors, hot carriers, carrier relaxation, hot-phonon effect, time-resolved optical spectroscopy, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Condensed Matter Physics, Condensed Matter::Materials Science, Semiconductor, Excited state, ddc:530, General Materials Science, Spectroscopy, business, Excitation |
| الوصف: | Carrier and lattice relaxation after optical excitation is simulated for the prototypical wide-bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes as well as longitudinal-optic (LO), transverse-optic (TO) and acoustic phonons are distinguished. Carrier-LO-phonon interaction constitutes the dominant energy-loss channel as expected for polar semiconductors and hot-phonon effects are observed for strong optical excitation. Our results support the findings of recent time-resolved optical spectroscopy experiments. |
| تدمد: | 1361-648X 0953-8984 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ef9eaeaf73f40244aaa7e24dbc1bc17 https://doi.org/10.1088/1361-648x/abf19b |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....9ef9eaeaf73f40244aaa7e24dbc1bc17 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1361648X 09538984 |
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