التفاصيل البيبلوغرافية
العنوان:
Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications
المؤلفون:
Uthayasankaran Peralagu , Bertrand Parvais , Po-Chun Brent Hsu , V. Putcha , Eddy Simoen , Nadine Collaert , Niamh Waldron , Ming Zhao , Kenichiro Takakura , Hongyue Wang , Hao Yu
المساهمون:
Yu, Shaofeng, Zhu, Xiaona, Tang, Ting-Ao, Physics, Electronics and Informatics
المصدر:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) .
بيانات النشر:
IEEE, 2020.
سنة النشر:
2020
مصطلحات موضوعية:
Materials science , Deep-level transient spectroscopy , Silicon , business.industry , chemistry.chemical_element , Noise spectroscopy , Gallium nitride , Trap (computing) , chemistry.chemical_compound , chemistry , Logic gate , Optoelectronics , Electrical and Electronic Engineering , Spectroscopy , business
الوصف:
This paper describes the application of Deep Level Transient Spectroscopy and Generation-Recombination Noise Spectroscopy to the study of trap levels in III-V and III-N materials and devices.
URL الوصول:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b48d48fd0653aed31b43fd47df41f3b2 https://doi.org/10.1109/icsict49897.2020.9278262
حقوق:
CLOSED
رقم الأكسشن:
edsair.doi.dedup.....b48d48fd0653aed31b43fd47df41f3b2
قاعدة البيانات:
OpenAIRE
