On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array
| العنوان: | On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array |
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| المؤلفون: | Keigo Otsuka, Shohei Chiashi, Etsuo Maeda, Shigeo Maruyama, Taiki Inoue, Reo Kometani |
| المصدر: | ACS Nano. 11:11497-11504 |
| بيانات النشر: | American Chemical Society (ACS), 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Fabrication, Silicon, Semiconductor device fabrication, Transistor, General Engineering, General Physics and Astronomy, chemistry.chemical_element, Nanotechnology, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Carbon nanotube, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, law.invention, chemistry, law, Ballistic conduction, Logic gate, Hardware_INTEGRATEDCIRCUITS, General Materials Science, Field-effect transistor, 0210 nano-technology |
| الوصف: | Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices. |
| تدمد: | 1936-086X 1936-0851 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b88520e2a542894e14427700c98cdf19 https://doi.org/10.1021/acsnano.7b06282 |
| رقم الأكسشن: | edsair.doi.dedup.....b88520e2a542894e14427700c98cdf19 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 1936086X 19360851 |
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