Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH sensor
| العنوان: | Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH sensor |
|---|---|
| المؤلفون: | Hafsa Bouhnane, Andrew Hathcock, Dongyuan He, Simon Gautier, Thi Quynh Phuong Vuong, Yacine Halfaya, Adama Mballo, Chris Bishop, Abdallah Ougazzaden, Nossikpendou Yves Sama, Jean Michel Matray, Jean-Paul Salvestrini, Soufiane Karrakchou, Ali Ahaitouf, Taha Ayari |
| المساهمون: | Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Institut Lafayette, Institut Lafayette (Institut Lafayette), PSE-ENV/SEDRE/LETIS, Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Laboratoire Signaux Systèmes et Composants (LSSC), Faculté des sciences (Fès) |
| المصدر: | 2019 IEEE SENSORS 2019 IEEE SENSORS, Oct 2019, MONTRÉAL, Canada. pp.8956762, 2019, 2019 IEEE SENSORS, ⟨10.1109/SENSORS43011.2019.8956762⟩ 2019 IEEE SENSORS, Oct 2019, Montreal, France. IEEE, pp.1-4, 2019, ⟨10.1109/SENSORS43011.2019.8956762⟩ |
| بيانات النشر: | HAL CCSD, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Annealing (metallurgy), 010401 analytical chemistry, Analytical chemistry, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, Scandium oxide, 021001 nanoscience & nanotechnology, 01 natural sciences, Reference electrode, Capacitance, 0104 chemical sciences, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, Standard electrode potential, Thin film, 0210 nano-technology |
| الوصف: | International audience; In this work, an all-solid-state electrolyte-insulator-semiconductor (EIS) device is developed for pH sensing performance evaluation of insulating materials. The EIS capacitor incorporates scandium oxide (Sc2O3) sensing film deposited on undoped gallium nitride (u-GaN) by thermal evaporation. The structural and morphological features of the thin films annealed at different temperatures (650-850°C), were investigated through X-ray diffraction and AFM analysis. A gold wire with diameter of 25 µm was bonded on the device and served as the quasi reference electrode for the C-V measurements and pH sensitivity characterizations. After correction of the measured capacitance regarding the pH dependent variation of the standard potential E0(pH) of gold, the Sc2O3 EIS capacitor prepared with an annealing at 650°C exhibited a linear response with a sensitivity of 40 mV/pH while the device with the as-deposited Sc2O3 film showed nonlinear behavior and, those annealed at temperature higher than 650°C were shown to be insensitive to pH variation. |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb11f9e7f57f00d1bd47e1870f2869e0 https://hal.archives-ouvertes.fr/hal-02870737/document |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....bb11f9e7f57f00d1bd47e1870f2869e0 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |