Fundamental Aspects and Comprehensive Review on Physical Properties of Chemically Grown Tin-Based Binary Sulfides

التفاصيل البيبلوغرافية
العنوان: Fundamental Aspects and Comprehensive Review on Physical Properties of Chemically Grown Tin-Based Binary Sulfides
المؤلفون: Woo Kyoung Kim, Vasudeva Reddy Minnam Reddy, Sreedevi Gedi, Tulasi Ramakrishna Reddy Kotte, Chinho Park
المصدر: Nanomaterials, Vol 11, Iss 1955, p 1955 (2021)
Nanomaterials
بيانات النشر: MDPI AG, 2021.
سنة النشر: 2021
مصطلحات موضوعية: Materials science, General Chemical Engineering, chemistry.chemical_element, Nanotechnology, Review, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, o-SnS, c-SnS, Photovoltaics, SnS2, Thermoelectric effect, Deposition (phase transition), General Materials Science, Thin film, Sn2S3, QD1-999, Solution process, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Chemistry, chemistry, solar cells, Photocatalysis, CBD, 0210 nano-technology, Tin, business, Chemical bath deposition
الوصف: The rapid research progress in tin-based binary sulfides (SnxSy = o-SnS, c-SnS, SnS2, and Sn2S3) by the solution process has opened a new path not only for photovoltaics to generate clean energy at ultra-low costs but also for photocatalytic and thermoelectric applications. Fascinated by their prosperous developments, a fundamental understanding of the SnxSy thin film growth with respect to the deposition parameters is necessary to enhance the film quality and device performance. Therefore, the present review article initially delivers all-inclusive information such as structural characteristics, optical characteristics, and electrical characteristics of SnxSy. Next, an overview of the chemical bath deposition of SnxSy thin films and the influence of each deposition parameter on the growth and physical properties of SnxSy are interestingly outlined.
تدمد: 2079-4991
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb26d90647448bb4561daaacfb5e3f3f
https://doi.org/10.3390/nano11081955
حقوق: OPEN
رقم الأكسشن: edsair.doi.dedup.....bb26d90647448bb4561daaacfb5e3f3f
قاعدة البيانات: OpenAIRE