Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction
العنوان: | Imaging shape and strain in nanoscale engineered semiconductors for photonics by coherent x-ray diffraction |
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المؤلفون: | Antonio Polimeni, Marco Felici, Jesse N. Clark, Felisa Berenguer, Amalia Patanè, Nilanthy Balakrishnan, Gianluca Ciatto, Sylvain Ravy, Giorgio Pettinari |
المساهمون: | Laboratoire de Physique des Solides (LPS), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS) |
المصدر: | Communications Materials Communications Materials, 2020, 1 (1), ⟨10.1038/s43246-020-0021-6⟩ Communications Materials, Vol 1, Iss 1, Pp 1-8 (2020) |
بيانات النشر: | Springer Science and Business Media LLC, 2020. |
سنة النشر: | 2020 |
مصطلحات موضوعية: | QA75, Nanostructure, Materials science, Imaging techniques, hydrogen irradiation, nanofabrication, dilute nitrides, Nanophotonics, 02 engineering and technology, Q1, 010402 general chemistry, 01 natural sciences, Microscopy, General Materials Science, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Materials of engineering and construction. Mechanics of materials, Lithography, Nanoscopic scale, business.industry, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Quantum technology, Nanolithography, Mechanics of Materials, TA401-492, Optoelectronics, Photonics, 0210 nano-technology, business |
الوصف: | Coherent x-ray diffractive imaging is a nondestructive technique that extracts three-dimensional electron density and strain maps from materials with nanometer resolution. It has been utilized for materials in a range of applications, and has significant potential for imaging buried nanostructures in functional devices. Here, we show that coherent x-ray diffractive imaging is able to bring new understanding to a lithography-based nanofabrication process for engineering the optical properties of semiconducting GaAs1-yNy on a GaAs substrate. This technique allows us to test the process reliability and the manufactured patterns quality. We demonstrate that regular and sharp geometrical structures can be produced on a few-micron scale, and that the strain distribution is uniform even for highly strained sub-microscopic objects. This nondestructive study would not be possible using conventional microscopy techniques. Our results pave the way for tailoring the optical properties of emitters with nanometric precision for nanophotonics and quantum technology applications. Coherent x-ray diffractive imaging is a powerful technique for determining strain on the nanometer scale. Here, it is used to image semiconducting GaAs1-yNy structures on a GaAs substrate and to measure strain, demonstrating its potential for studying highly strained interfaces in devices. |
وصف الملف: | application/pdf |
تدمد: | 2662-4443 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c125cf31c7eb16d7dfc82b2a831addd5 https://doi.org/10.1038/s43246-020-0021-6 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi.dedup.....c125cf31c7eb16d7dfc82b2a831addd5 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 26624443 |
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