Characterization of Asymmetric Gap-Engineered Josephson Junctions and 3D Transmon Qubits
| العنوان: | Characterization of Asymmetric Gap-Engineered Josephson Junctions and 3D Transmon Qubits |
|---|---|
| المؤلفون: | Zach Steffen, S. K. Dutta, Haozhi Wang, Kungang Li, Yizhou Huang, Yi-Hsiang Huang, Advait Mathur, F. C. Wellstood, B. S. Palmer |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | Superconductivity (cond-mat.supr-con), Quantum Physics, Condensed Matter - Superconductivity, FOS: Physical sciences, Electrical and Electronic Engineering, Condensed Matter Physics, Quantum Physics (quant-ph), Electronic, Optical and Magnetic Materials |
| الوصف: | We have fabricated and characterized asymmetric gap-engineered junctions and transmon devices. To create Josephson junctions with asymmetric gaps, Ti was used to proximitize and lower the superconducting gap of the Al counter-electrode. DC IV measurements of these small, proximitized Josephson junctions show a reduced gap and larger excess current for voltage biases below the superconducting gap when compared to standard Al/AlOx/Al junctions. The energy relaxation time constant for an Al/AlOx/Al/Ti 3D transmon was T1 = 1 {\mu}s, over two orders of magnitude shorter than the measured T1 = 134 {\mu}s of a standard Al/AlOx/Al 3D transmon. Intentionally adding disorder between the Al and Ti layers reduces the proximity effect and subgap current while increasing the relaxation time to T1 = 32 {\mu}s. Comment: 5 pages, 3 figures, to be published in IEEE Transactions on Applied Superconductivity |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1a67a75fbb72869dd3bc538e27ece73 http://arxiv.org/abs/2302.12280 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....d1a67a75fbb72869dd3bc538e27ece73 |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |