MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates
| العنوان: | MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates |
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| المؤلفون: | Paul L. Voss, Xin Li, Yacine Halfaya, Gilles Patriarche, Abdallah Ougazzaden, Taha Ayari, Jean-Paul Salvestrini, Saiful Alam, Suresh Sundaram |
| المساهمون: | Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Smith College, Picker Engineering Program, Northampton |
| المصدر: | Journal of Crystal Growth Journal of Crystal Growth, Elsevier, 2019, 507, pp.352-356. ⟨10.1016/j.jcrysgro.2018.10.060⟩ |
| بيانات النشر: | Elsevier BV, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Diffraction, Materials science, B2. Deep UV LEDs, Cathodoluminescence, 02 engineering and technology, Epitaxy, 01 natural sciences, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], Inorganic Chemistry, symbols.namesake, B1. Nitrides, 0103 physical sciences, Materials Chemistry, Metalorganic vapour phase epitaxy, 010302 applied physics, B1. h-BN B1. AlGaN MQWs, business.industry, A3. Metalorganic vapor phase epitaxy, B1. 2D materials, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Exfoliation joint, Transmission electron microscopy, Sapphire, symbols, Optoelectronics, van der Waals force, 0210 nano-technology, business |
| الوصف: | International audience; We report wafer-scale growth and mechanical exfoliation of 20 periodAl0.58Ga0.42N/Al0.37Ga0.63N multiple quantum wells (MQWs) on h-BN buffered templates and compare them to control samples of the same structure on AlN templates. X-ray diffraction measurements of the MQW structure on h-BN clearly featured satellite peaks up to third order in the 2θ−ω scans indicating good MQW periodicity. Detailed transmission electron microscope (TEM) analysis show good heterointerface quality in the structure and large V-pits on the surface. Depth resolved cathodoluminescence of the MQWs on h-BN revealed a UV emission peak at 299 nm and a sharp shoulder at 292 nm. We also report lift-off and transfer of the MQW on the h-BN structure and have investigated post-transfer optical emission, which demonstrates good preservation of optical emission characteristics. Together these results show the suitability of h-BN buffers for the realization of free-standing or flexible optical devices emitting in the deep UV region. |
| تدمد: | 0022-0248 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d33cdeae350b4a246b3b7e4d2b1cf13e https://doi.org/10.1016/j.jcrysgro.2018.10.060 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....d33cdeae350b4a246b3b7e4d2b1cf13e |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 00220248 |
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