Two-Dimensional Topological Insulator State in Cadmium Arsenide Thin Films

التفاصيل البيبلوغرافية
العنوان: Two-Dimensional Topological Insulator State in Cadmium Arsenide Thin Films
المؤلفون: Alexander C. Lygo, Binghao Guo, Arman Rashidi, Victor Huang, Pablo Cuadros-Romero, Susanne Stemmer
المصدر: Physical Review Letters. 130
بيانات النشر: American Physical Society (APS), 2023.
سنة النشر: 2023
مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, General Physics and Astronomy
الوصف: Two-dimensional topological insulators (2D TIs) are a highly desired quantum phase but few materials have demonstrated clear signatures of a 2D TI state. It has been predicted that 2D TIs can be created from thin films of three-dimensional TIs by reducing the film thickness until the surface states hybridize. Here, we employ this technique to report the first observation of a 2D TI state in epitaxial thin films of cadmium arsenide, a prototype Dirac semimetal in bulk form and a 3D TI in thin films. Using magnetotransport measurements with electrostatic gating, we observe a Landau level spectrum and quantum Hall effect that are in excellent agreement with those of an ideal 2D TI. Specifically, we observe a crossing of the zeroth Landau levels at a critical magnetic field. We show that the film thickness can be used to tune the critical magnetic field. Moreover, a larger change in film thickness causes a transition from a 2D TI to a 2D trivial insulator, just as predicted by theory. The high degree of tunability available in epitaxial cadmium arsenide heterostructures can thus be used to fine-tune the 2D TI, which is essential for future topological devices.
Accepted for publication in Physical Review Letters. Fixed issues with the display of Fig. 3 in the pdf in this version
تدمد: 1079-7114
0031-9007
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5bcfe75ee42733c25343c00fef1a3c0
https://doi.org/10.1103/physrevlett.130.046201
حقوق: OPEN
رقم الأكسشن: edsair.doi.dedup.....d5bcfe75ee42733c25343c00fef1a3c0
قاعدة البيانات: OpenAIRE