Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories

التفاصيل البيبلوغرافية
العنوان: Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories
المؤلفون: E. Camerlenghi, Ali Zadeh, Giovanni Santin, Veronique Ferlet-Cavrois, Alessandro Paccagnella, Simone Gerardin, Alessandra Costantino, Marta Bagatin, S. Beltrami, M. Bertuccio, Eamonn Daly
المصدر: IEEE Transactions on Nuclear Science. 65:318-325
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE), 2018.
سنة النشر: 2018
مصطلحات موضوعية: 010302 applied physics, Nuclear and High Energy Physics, floating gate (FG) devices, Materials science, 010308 nuclear & particles physics, business.industry, single-event effects, NAND gate, Flash memories, heavy ions, Nuclear Energy and Engineering, Electrical and Electronic Engineering, Dielectric, 01 natural sciences, Fluence, Upset, Threshold voltage, Non-volatile memory, Planar, 0103 physical sciences, Optoelectronics, Irradiation, business
الوصف: The effects of heavy-ion irradiation on 3-D NAND flash memory cells are investigated. Threshold voltage distributions are studied before and after exposure, as a function of the linear energy transfer, fluence, and irradiation angle. Shifts are smaller in 3-D devices than those in planar ones, for the same equivalent bit density. The cell circular shape and the fact that the tunnel oxide and interpoly dielectric blocking layers are perpendicular to the semiconductor substrate make it possible to gain insight into the underlying upset mechanism, which cannot be obtained with planar devices. Evidence that energy deposition in the blocking oxide layer can contribute to charge loss from the floating gate is presented.
تدمد: 1558-1578
0018-9499
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8f46a48b1a03a777a771bb21b937d55
https://doi.org/10.1109/tns.2017.2777887
حقوق: CLOSED
رقم الأكسشن: edsair.doi.dedup.....e8f46a48b1a03a777a771bb21b937d55
قاعدة البيانات: OpenAIRE