Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories
العنوان: | Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash Memories |
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المؤلفون: | E. Camerlenghi, Ali Zadeh, Giovanni Santin, Veronique Ferlet-Cavrois, Alessandro Paccagnella, Simone Gerardin, Alessandra Costantino, Marta Bagatin, S. Beltrami, M. Bertuccio, Eamonn Daly |
المصدر: | IEEE Transactions on Nuclear Science. 65:318-325 |
بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2018. |
سنة النشر: | 2018 |
مصطلحات موضوعية: | 010302 applied physics, Nuclear and High Energy Physics, floating gate (FG) devices, Materials science, 010308 nuclear & particles physics, business.industry, single-event effects, NAND gate, Flash memories, heavy ions, Nuclear Energy and Engineering, Electrical and Electronic Engineering, Dielectric, 01 natural sciences, Fluence, Upset, Threshold voltage, Non-volatile memory, Planar, 0103 physical sciences, Optoelectronics, Irradiation, business |
الوصف: | The effects of heavy-ion irradiation on 3-D NAND flash memory cells are investigated. Threshold voltage distributions are studied before and after exposure, as a function of the linear energy transfer, fluence, and irradiation angle. Shifts are smaller in 3-D devices than those in planar ones, for the same equivalent bit density. The cell circular shape and the fact that the tunnel oxide and interpoly dielectric blocking layers are perpendicular to the semiconductor substrate make it possible to gain insight into the underlying upset mechanism, which cannot be obtained with planar devices. Evidence that energy deposition in the blocking oxide layer can contribute to charge loss from the floating gate is presented. |
تدمد: | 1558-1578 0018-9499 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8f46a48b1a03a777a771bb21b937d55 https://doi.org/10.1109/tns.2017.2777887 |
حقوق: | CLOSED |
رقم الأكسشن: | edsair.doi.dedup.....e8f46a48b1a03a777a771bb21b937d55 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 15581578 00189499 |
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