Thorough investigation of low frequency noise mechanisms in AlGaN/GaN and Al$_2$O$_3$/GaN HEMTs
| العنوان: | Thorough investigation of low frequency noise mechanisms in AlGaN/GaN and Al$_2$O$_3$/GaN HEMTs |
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| المؤلفون: | R. Kom Kammeugne, C. Theodorou, C. Leroux, X. Mescot, L. Vauche, R. Gwoziecki, S. Becu, M. Charles, E. Bano, G. Ghibaudo |
| المساهمون: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), ANR-10-AIRT-0005,NANOELEC,NANOELEC(2010) |
| المصدر: | IEDM2021-IEEE International Electron Devices Meeting IEDM2021-IEEE International Electron Devices Meeting, Dec 2021, San Francisco, United States. pp.39.4.1-39.4.4, ⟨10.1109/IEDM19574.2021.9720522⟩ |
| بيانات النشر: | HAL CCSD, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.TRON]Engineering Sciences [physics]/Electronics |
| الوصف: | International audience; This paper investigates the AlGaN/GaN and Al2O3/GaN interface quality on GaN MIS-HEMT using low frequency noise (LFN) measurements. To address the issue of noise in the access resistance, we have also tested "non-gated" 2DEG devices. The LFN has a 1/f-like behaviour caused by trapping/de-trapping processes which has been well described by carrier number fluctuations (CNF) and correlated mobility fluctuation (CMF) models. The border trap density extracted in optimised devices is better than previously reported GaN data and close to silicon CMOS results. Finally, a noise model for GaN-HEMT with recessed MIS gate including a 2DEG access resistance noise source is proposed. |
| اللغة: | English |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb61c3bc315dc58cdcf6db450771e58a https://hal.science/hal-03762149 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....eb61c3bc315dc58cdcf6db450771e58a |
| قاعدة البيانات: | OpenAIRE |
| الوصف غير متاح. |