An Efficient 4H-SiC Photodiode for UV Sensing Applications
| العنوان: | An Efficient 4H-SiC Photodiode for UV Sensing Applications |
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| المؤلفون: | Elisa Demetra Mallemace, M.L. Megherbi, Fortunato Pezzimenti, Lakhdar Dehimi, H. Bencherif, Francesco G. Della Corte, Sandro Rao |
| المساهمون: | Megherbi, M. L., Bencherif, H., Dehimi, L., Mallemace, E. D., Rao, S., Pezzimenti, F., Della Corte, F. G. |
| المصدر: | Electronics, Vol 10, Iss 2517, p 2517 (2021) Electronics Volume 10 Issue 20 |
| بيانات النشر: | MDPI AG, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, 4H-SiC, TK7800-8360, Computer Networks and Communications, Optical power, temperature effect, Radiation, medicine.disease_cause, law.invention, Responsivity, p-i-n photodiode, law, medicine, Electrical and Electronic Engineering, Photocurrent, business.industry, responsivity, Photodiode, Wavelength, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Optoelectronics, Quantum efficiency, Electronics, business, Ultraviolet |
| الوصف: | In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 nA/cm2 at −10 V, while the photocurrent density rises to 6.36 µA/cm2 at the same bias under λ = 315 nm ultraviolet (UV) radiation with an incident optical power density of 29.83 μW/cm2. At the wavelength of λ = 285 nm, the responsivity is maximum, 0.168 A/W at 0 V, and 0.204 A/W at −30 V, leading to an external quantum efficiency of 72.7 and 88.3%, respectively. Moreover, the long-term stability of the photodiode performances has been examined after exposing the device under test to several cycles of thermal stress, from 150 up to 350 °C and vice versa. The achieved results prove that the examined high-efficiency UV photodiode also has a stable responsivity if subjected to high temperature variations. The proposed device is fully compatible with the conventional production process of 4H-SiC components. |
| وصف الملف: | application/pdf |
| اللغة: | English |
| تدمد: | 2079-9292 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eca9795c3ca5ff15d8797e3152020f75 https://www.mdpi.com/2079-9292/10/20/2517 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....eca9795c3ca5ff15d8797e3152020f75 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20799292 |
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