Tunnel field-effect transistors for sensitive terahertz detection
| العنوان: | Tunnel field-effect transistors for sensitive terahertz detection |
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| المؤلفون: | Shuigang Xu, Denis A. Bandurin, Kenji Watanabe, Takashi Taniguchi, Andre K. Geim, Igor Gayduchenko, Georgy Fedorov, Georgy Alymov, I. V. Tretyakov, Gregory Goltsman, M. Moskotin, Dmitry Svintsov |
| المصدر: | Gayduchenko, I, Xu, S, Alymov, G, Moskotin, M, Tretyakov, I, Taniguchi, T, Watanabe, K, Goltsman, G, Geim, A, Fedorov, G, Svintsov, D & Bandurin, D 2020, ' Tunnel field-effect transistors for sensitive terahertz detection ', Nature Communications . < https://arxiv.org/abs/2010.03040 > Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021) Nature Communications |
| بيانات النشر: | Springer Science and Business Media LLC, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Terahertz radiation, Science, FOS: Physical sciences, Physics::Optics, General Physics and Astronomy, 02 engineering and technology, Two-dimensional materials, 01 natural sciences, Article, General Biochemistry, Genetics and Molecular Biology, Responsivity, Rectification, Tunnel junction, Condensed Matter::Superconductivity, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Ohmic contact, Quantum tunnelling, 010302 applied physics, Multidisciplinary, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter::Other, business.industry, General Chemistry, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Applied physics, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Bilayer graphene |
| الوصف: | The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sqrt{{\rm{Hz}}}$$\end{document}Hz) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. Here, a strong nonlinearity of the gate-induced tunnel junction in bilayer graphene is used for efficient terahertz detection. The improved signal-to-noise ratio, as compared to conventional detectors, offers the application of steep-switching transistors in terahertz technology. |
| وصف الملف: | application/pdf |
| تدمد: | 2041-1723 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f27b3b70b77f570d8bb2daf0b9a61f03 https://doi.org/10.1038/s41467-020-20721-z |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....f27b3b70b77f570d8bb2daf0b9a61f03 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20411723 |
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