Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide
| العنوان: | Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide |
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| المؤلفون: | Peter Awakowicz, Guido Grundmeier, Bert Mallick, Anjana Devi, Nils Boysen, Felix Mitschker, Lukas Mai, Teresa de los Arcos, David Zanders |
| المصدر: | Chemistry – A European Journal. 25:7489-7500 |
| بيانات النشر: | Wiley, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | chemistry.chemical_classification, 010405 organic chemistry, Organic Chemistry, Inorganic chemistry, chemistry.chemical_element, General Chemistry, 010402 general chemistry, 01 natural sciences, Evaporation (deposition), Catalysis, 0104 chemical sciences, Atomic layer deposition, chemistry.chemical_compound, chemistry, Aluminium, Aluminium oxide, Thermal stability, Reactivity (chemistry), Trimethylaluminium, Alkyl |
| الوصف: | New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to the pyrophoric trimethylaluminium (TMA) which is to date a widely used Al precursor. Combining the high reactivity of aluminium alkyls employing the 3-(dimethylamino)propyl (DMP) ligand with thermally stable amide ligands yielded three new heteroleptic, non-pyrophoric compounds [Al(NMe2 )2 (DMP)] (2), [Al(NEt2 )2 (DMP)] (3, BDEADA) and [Al(NiPr2 )2 (DMP)] (4), which combine the properties of both ligand systems. The compounds were synthesized and thoroughly chemically characterized, showing the intramolecular stabilization of the DMP ligand as well as only reactive Al-C and Al-N bonds, which are the key factors for the thermal stability accompanied by a sufficient reactivity, both being crucial for ALD precursors. Upon rational variation of the amide alkyl chains, tunable and high evaporation rates accompanied by thermal stability were found, as revealed by thermal evaluation. In addition, a new and promising plasma enhanced (PE)ALD process using BDEADA and oxygen plasma in a wide temperature range from 60 to 220 °C is reported and compared to that of a modified variation of the TMA, namely [AlMe2 (DMP)] (DMAD). The resulting Al2 O3 layers are of high density, smooth, uniform, and of high purity. The applicability of the Al2 O3 films as effective gas barrier layers (GBLs) was successfully demonstrated, considering that coating on polyethylene terephthalate (PET) substrates yielded very good oxygen transmission rates (OTR) with an improvement factor of 86 for a 15 nm film by using DMAD and a factor of 25 for a film thickness of just 5 nm by using BDEDA compared to bare PET substrates. All these film attributes are of the same quality as those obtained for the industrial precursor TMA, rendering the new precursors safe and potential alternatives to TMA. |
| تدمد: | 1521-3765 0947-6539 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2adc69577f1c9dc4ac364e1da49efc7 https://doi.org/10.1002/chem.201900475 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....f2adc69577f1c9dc4ac364e1da49efc7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15213765 09476539 |
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