Chemical Vapor Deposition of Porous GaN Particles on Silicon
| العنوان: | Chemical Vapor Deposition of Porous GaN Particles on Silicon |
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| المؤلفون: | Francesc Díaz, Oleksandr V. Bilousov, Magdalena Aguiló, J. Carlos Rojo, Joan J. Carvajal, Dominique Drouin |
| المصدر: | Microscopy and Microanalysis. 18:905-911 |
| بيانات النشر: | Oxford University Press (OUP), 2012. |
| سنة النشر: | 2012 |
| مصطلحات موضوعية: | Materials science, Hybrid physical-chemical vapor deposition, business.industry, Nanoporous, Ion plating, Inorganic chemistry, Combustion chemical vapor deposition, Electron beam physical vapor deposition, Plasma-enhanced chemical vapor deposition, Optoelectronics, Thin film, business, Instrumentation, Plasma processing |
| الوصف: | We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties. |
| تدمد: | 1435-8115 1431-9276 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f83312451afbb2112cbb1dbc9836da80 https://doi.org/10.1017/s1431927612001134 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi.dedup.....f83312451afbb2112cbb1dbc9836da80 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 14358115 14319276 |
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