Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene
العنوان: | Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene |
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المؤلفون: | Hui Cai, Wanqi Jie, Bin Chen, Martin Kuball, Qinghua Zhao, Yan Zhou, Tao Wang, Elisha J M Mercado, Sefaattin Tongay, Yong Xie |
المصدر: | ACS Omega, Vol 4, Iss 19, Pp 18002-18010 (2019) ACS Omega Mercado, E J M, Zhou, Y, Xie, Y, Zhao, Q, Cai, H, Chen, B, Jie, W, Tongay, S, Wang, T & Kuball, M H H 2019, ' Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene ', ACS Omega . https://doi.org/10.1021/acsomega.9b01752 ACS omega, vol 4, iss 19 |
بيانات النشر: | American Chemical Society, 2019. |
سنة النشر: | 2019 |
مصطلحات موضوعية: | Materials science, Passivation, General Chemical Engineering, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Optical switch, Article, law.invention, chemistry.chemical_compound, symbols.namesake, law, Telluride, CDTR, Gallium, QD1-999, business.industry, Graphene, Materials Engineering, General Chemistry, Chemical Engineering, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Chemistry, Semiconductor, chemistry, symbols, Optoelectronics, van der Waals force, 0210 nano-technology, business, Raman spectroscopy |
الوصف: | Layered semiconductor gallium telluride (GaTe) undergoes a rapid structural transition to a degraded phase in ambient conditions, limiting its utility in devices such as optical switches. In this work, we demonstrate that the degradation process in GaTe flakes can be slowed down dramatically via encapsulation with graphene. Through examining Raman signatures of degradation, we show that the choice of substrate significantly impacts the degradation rate and that the process is accelerated by the transfer of GaTe to hydrophilic substrates such as SiO2/Si. We find that double encapsulation with both top and bottom graphene layers can extend the lifetime of the material for several weeks. The photoresponse of flakes encapsulated in this way is only reduced by 17.6 ± 0.4% after 2 weeks, whereas unencapsulated flakes display no response after this time. Our results demonstrate the potential for alternative, van der Waals material-based passivation strategies in unstable layered materials and highlight the need for careful selection of substrates for 2D electronic devices. |
وصف الملف: | application/pdf |
اللغة: | English |
تدمد: | 2470-1343 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa1815ac71718ea106c1d5fd49637c47 https://doaj.org/article/1a4c89d03c4142dcb995492ec6ad6b58 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi.dedup.....fa1815ac71718ea106c1d5fd49637c47 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 24701343 |
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