Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)
| العنوان: | Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019) |
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| المؤلفون: | Yacine Halfaya, Taha Ayari, Simon Gautier, Abdallah Ougazzaden, Jean-Paul Salvestrini, Xin Li, Suresh Sundaram, Chris Bishop, Paul L. Voss, Gilles Patriarche, Saiful Alam |
| المساهمون: | Université de Lorraine (UL), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Smith College, Picker Engineering Program, Northampton |
| المصدر: | Advanced Materials Interfaces Advanced Materials Interfaces, Wiley, 2019, 6 (16), pp.1970102. ⟨10.1002/admi.201970102⟩ |
| بيانات النشر: | HAL CCSD, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Nanowire, 02 engineering and technology, semiconductors, Nitride, 010402 general chemistry, Epitaxy, 01 natural sciences, flexible electronics, law.invention, [PHYS.MECA.MEMA]Physics [physics]/Mechanics [physics]/Mechanics of materials [physics.class-ph], chemistry.chemical_compound, symbols.namesake, law, core/shell nanostructures, 2D boron nitride, business.industry, van der Waals epitaxy, Mechanical Engineering, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Semiconductor, chemistry, Mechanics of Materials, Boron nitride, symbols, Optoelectronics, Nanorod, van der Waals force, 0210 nano-technology, business, nanorods, Light-emitting diode |
| الوصف: | International audience; In article number 1900207, Suresh Sundaram, Abdallah Ougazzaden, and co‐workers demonstrate self‐organized GaN nanorods formation on layered h‐BN templates by van der Waals epitaxial growth. This approach is used to grow III‐N nanowire light‐emitting diodes. In addition, this approach also mitigates transfer processes and scaling issues seen with other 2D materials, since both the 1D (GaN nanorods) and 2D (h‐BN) are grown at the wafer‐scale and in one epitaxial growth run. |
| اللغة: | English |
| تدمد: | 2196-7350 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc0367935aeb93faba06b45b3c7eb02f https://hal.archives-ouvertes.fr/hal-02282666 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi.dedup.....fc0367935aeb93faba06b45b3c7eb02f |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21967350 |
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