Over the past decades, Zinc Oxide (ZnO) semiconductor and its derivatives have been extensively developed because of its optoelectronic properties, such as piezoelectric and photocatalytic properties. Since ZnO is an intrinsic n-type semiconductor; therefore, how to synthesize high-quality p-type ZnO semiconductors with doping and investigate their optoelectronic properties and local chemical structures are important and necessary. This thesis presents two studies of synthesizing both undoped and phosphorus doped ZnO nano/microstructures by hydrothermal method and chemical vapor deposition (CVD) technique, respectively. The local chemical structure and the optical properties of both undoped and P-doped ZnO nano/microparticles are determined by the X-ray absorption near-edge structures (XANES) and X-ray excited optical luminescence (XEOL) technique, respectively. As a result, the P-doped ZnO lattice and substitute the Zn. The oxidation state of P in P-doped ZnO is 5+. The P-doped ZnO products have better crystallinity and less oxygen-based surface defect than the undoped ZnO products.
