A. G. CULLIS, M Texier, M Acciarri, S Binetti, D Cavalcoli, A Cavallini, D Chrastina, G Isella, M Lancin, A Le Donne, A Tomasi, B Pichaud, S Pizzini, M Rossi
Structural analysis of nanocrystalline Silicon layers deposited on oxidized and non-oxidized silicon substrates and on glass substrates by low-energy plasma-enhanced chemical vapour deposition technique was fulfilled by means of transmission electron microscopy. Low magnification and high resolution observations of specimens performed in plan-view and cross section are described and discussed. These results are compared to those obtained by atomic force microscopy study. Growth modes and relevant structural changes are tentatively correlated to elaboration parameters.
