Stable Subloop Behavior in Ferroelectric Si-Doped HfO

التفاصيل البيبلوغرافية
العنوان: Stable Subloop Behavior in Ferroelectric Si-Doped HfO
المؤلفون: Kyoungjun, Lee, Hyun-Jae, Lee, Tae Yoon, Lee, Hong Heon, Lim, Myeong Seop, Song, Hyang Keun, Yoo, Dong Ik, Suh, Jae Gil, Lee, Zhongwei, Zhu, Alexander, Yoon, Matthew R, MacDonald, Xinjian, Lei, Kunwoo, Park, Jungwon, Park, Jun Hee, Lee, Seung Chul, Chae
المصدر: ACS applied materialsinterfaces. 11(42)
سنة النشر: 2019
الوصف: The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic applications with various architectures. However, deterministic control of ferroelectric polarization states with conventional ferroelectric materials has been met with accessibility issues. Here, we report unprecedented stable accessibility with robust stability of multiple polarization states in ferroelectric HfO
تدمد: 1944-8252
URL الوصول: https://explore.openaire.eu/search/publication?articleId=pmid________::71978e5d3d7c3526d9a9b5c05ce40443
https://pubmed.ncbi.nlm.nih.gov/31576734
رقم الأكسشن: edsair.pmid..........71978e5d3d7c3526d9a9b5c05ce40443
قاعدة البيانات: OpenAIRE