التفاصيل البيبلوغرافية
العنوان:
Ultrathin ferroic HfO
المؤلفون:
Suraj S, Cheema , Nirmaan, Shanker , Li-Chen, Wang , Cheng-Hsiang, Hsu , Shang-Lin, Hsu , Yu-Hung, Liao , Matthew, San Jose , Jorge, Gomez , Wriddhi, Chakraborty , Wenshen, Li , Jong-Ho, Bae , Steve K, Volkman , Daewoong, Kwon , Yoonsoo, Rho , Gianni, Pinelli , Ravi, Rastogi , Dominick, Pipitone , Corey, Stull , Matthew, Cook , Brian, Tyrrell , Vladimir A, Stoica , Zhan, Zhang , John W, Freeland , Christopher J, Tassone , Apurva, Mehta , Ghazal, Saheli , David, Thompson , Dong Ik, Suh , Won-Tae, Koo , Kab-Jin, Nam , Dong Jin, Jung , Woo-Bin, Song , Chung-Hsun, Lin , Seunggeol, Nam , Jinseong, Heo , Narendra, Parihar , Costas P, Grigoropoulos , Padraic, Shafer , Patrick, Fay , Ramamoorthy, Ramesh , Souvik, Mahapatra , Jim, Ciston , Suman, Datta , Mohamed, Mohamed , Chenming, Hu , Sayeef, Salahuddin
المصدر:
Nature . 604(7904)
سنة النشر:
2021
الوصف:
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage
تدمد:
1476-4687
URL الوصول:
https://explore.openaire.eu/search/publication?articleId=pmid________::77332fdd50103bf7aa4204de78c57539 https://pubmed.ncbi.nlm.nih.gov/35388197
رقم الأكسشن:
edsair.pmid..........77332fdd50103bf7aa4204de78c57539
قاعدة البيانات:
OpenAIRE
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