Tunneling between Dilute GaAs Hole Layers

التفاصيل البيبلوغرافية
العنوان: Tunneling between Dilute GaAs Hole Layers
المؤلفون: Misra, S., Bishop, N. C., Tutuc, E., Shayegan, M.
سنة النشر: 2007
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor $\nu_T=1$, signaling the formation of a bilayer quantum Hall ferromagnet.
Comment: Revised to include additional data, new discussions
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevB.77.161301
URL الوصول: http://arxiv.org/abs/0706.1268
رقم الأكسشن: edsarx.0706.1268
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevB.77.161301