تقرير
High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates
| العنوان: | High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates |
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| المؤلفون: | Ruotolo, A., Lam, C. Y., Cheng, W. F., Wong, K. H., Leung, C. W. |
| سنة النشر: | 2007 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Strongly Correlated Electrons |
| الوصف: | We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10^20 cm^(-3). Moreover, the junctions show hysteretic current-voltage characteristics. Comment: 10 pages, 9 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.76.075122 |
| URL الوصول: | http://arxiv.org/abs/0706.1620 |
| رقم الأكسشن: | edsarx.0706.1620 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevB.76.075122 |
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