Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

التفاصيل البيبلوغرافية
العنوان: Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
المؤلفون: Malard, L. M., Elias, D. C., Alves, E. S., Pimenta, M. A.
المصدر: Phys. Rev. Lett. 101, 257401 (2008)
سنة النشر: 2008
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
Comment: 4 pages, 4 figures
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevLett.101.257401
URL الوصول: http://arxiv.org/abs/0808.2452
رقم الأكسشن: edsarx.0808.2452
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevLett.101.257401