تقرير
Investigation of Sb diffusion in amorphous silicon
| العنوان: | Investigation of Sb diffusion in amorphous silicon |
|---|---|
| المؤلفون: | Csik, A., Langer, G. A., Erdelyi, G., Beke, D. L., Erdelyi, Z., Vad, K. |
| المصدر: | Vacuum 82(2) (2008) 257-260 |
| سنة النشر: | 2009 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | Amorphous silicon materials and its alloys become extensively used in some technical applications involving large area of the microelectronic and optoelectronic devices. However, the amorphous-crystalline transition, segregation and diffusion processes still have numerous unanswered questions. In this work we study the Sb diffusion into an amorphous Si film by means of Secondary Neutral Mass Spectrometry (SNMS). Amorphous Si/Si1-xSbx/Si tri-layer samples with 5 at% antimony concentration were prepared by DC magnetron sputtering onto Si substrate at room temperature. Annealing of the samples were performed at different temperature in vacuum (p<10-7 mbar) and 100 bar high purity (99.999%) Ar pressure. During annealing a rather slow mixing between the Sb-alloyed and the amorphous Si layers was observed. Supposing concentration independent diffusion, the evaluated diffusion coefficients are in the range of ~10-21 m2s-1 at 823 K. Comment: This work was presented on JVC-11 conference |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/0902.2042 |
| رقم الأكسشن: | edsarx.0902.2042 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |