Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers

التفاصيل البيبلوغرافية
العنوان: Phosphorous alloying: controlling the magnetic anisotropy in ferromagnetic (Ga,Mn)(As,P) Layers
المؤلفون: Cubukcu, M., von Bardeleben, H. J., Khazen, Kh., Cantin, J. L., Mauguin, O., Largeau, L., Lemaitre, A.
سنة النشر: 2009
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: Phosphorous alloying of GaMnAs thin films has been used for the manipulation of the magnetic anisotropies in ferromagnetic Ga0.93Mn0.07As1-yPy layers. We have determined the anisotropy constants as a function of temperature for phosphorous alloying levels between 0 and 8.8 at % for a Mn doping level of ~ 7at%. We show that it is possible to obtain layers with robust ferromagnetism and either in-plane or out-of plane easy axes with small barriers for magnetization reorientation by phosphorous alloying with y< 6at% or y> 6at%. The critical temperatures are not significantly increased by the P alloying.
Comment: 14 pages, 3 figures
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/0908.0063
رقم الأكسشن: edsarx.0908.0063
قاعدة البيانات: arXiv