تقرير
Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels
| العنوان: | Radiation Tolerance of CMOS Monolithic Active Pixel Sensors with Self-Biased Pixels |
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| المؤلفون: | Deveaux, M., Amar-Youcef, S., Besson, A., Claus, G., Colledani, C., Dorokhov, M., Dritsa, C., Dulinski, W., Froehlich, I., Goffe, M., Grandjean, D., Heini, S., Himmi, A., Hu, C., Jaaskelainen, K., Muentz, C., Shabetai, A., Stroth, J., Szelezniak, M., Valin, I., Winter, M. |
| المصدر: | Nucl.Instrum.Meth.A624:428-431,2010 |
| سنة النشر: | 2009 |
| المجموعة: | Nuclear Experiment Physics (Other) |
| مصطلحات موضوعية: | Physics - Instrumentation and Detectors, Nuclear Experiment |
| الوصف: | CMOS Monolithic Active Pixel Sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the the dead time free, so-called self bias pixel. Moreover, we discuss radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1016/j.nima.2010.04.045 |
| URL الوصول: | http://arxiv.org/abs/0908.4202 |
| رقم الأكسشن: | edsarx.0908.4202 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1016/j.nima.2010.04.045 |
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