تقرير
Orbital photogalvanic effects in quantum-confined structures
| العنوان: | Orbital photogalvanic effects in quantum-confined structures |
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| المؤلفون: | Karch, J., Tarasenko, S. A., Olbrich, P., Schönberger, T., Reitmaier, C., Plohmann, D., Kvon, Z. D., Ganichev, S. D. |
| سنة النشر: | 2009 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation. Comment: 8 pages, 5 figures, two culumnes |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/0953-8984/22/35/355307 |
| URL الوصول: | http://arxiv.org/abs/0912.0974 |
| رقم الأكسشن: | edsarx.0912.0974 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/0953-8984/22/35/355307 |
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